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| To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SC5890 Silicon NPN Epitaxial UHF / VHF wide band amplifier ADE-208-1533 (Z) 1st. Edition Aug.2002 Features * High gain bandwidth product: fT = 7.8 GHz typ. * High power gain and low noise figure; PG = 12 dB typ., NF = 1.0 dB typ. at f = 900 MHz * High collector power dissipation: Pc = 700 mW when using alumina ceramic board (25 x 60 x 0.7 mm) * High withstanding to ESD of collector to emitter: Withstand up to 700 V (only real value) at C = 200 pF, Rs = 0 condition. Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is "FS-". 2SC5890 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 20 12 1.5 75 700* 150 -55 to +150 Unit V V V mA mW C C *When using alumina ceramic board (25 x 60 x 0.7 mm) Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Reverse transfer capacitance Gain bandwidth product Forward transfer coefficient Power gain Noise figure Symbol Min V(BR)CBO ICBO ICEO IEBO hFE Cob Cre fT S21 PG NF 2 Typ -- -- -- -- 150 0.9 0.85 7.8 11 12 1.0 Max -- 1 1 10 200 1.5 -- -- -- -- 1.9 Unit V A mA A V pF pF GHz dB dB dB Test Conditions IC = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 9 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 30 mA, f = 1 GHz VCE = 5 V, IC = 30 mA, f = 1 GHz VCE = 5 V, IC = 30 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz 20 -- -- -- 100 -- -- 5.5 -- 9.5 -- Rev.0, Aug. 2002, page 2 of 14 2SC5890 Collector Power Dissipation Curve Pc (mW) DC Current Transfer Ratio vs. Collector Current 200 800 when using alumina ceramic board: S = 25 mm X 60 mm, t = 0.7 mm VCE = 5 V DC Current T hFE 600 Collector Power Dissipation 3V 400 100 200 0 0 50 100 150 Ta (C) 200 1 2 5 10 20 IC 50 (mA) 100 Ambient Temperature Collector Current Collector Output Capacitance vs. Collector to Base Voltage (pF) Gain Bandwidth Product vs. Collector Current 10 (GHz) 4.0 IE = 0 f = 1 MHz Cob 3.2 8 VCE = 5 V Collector Output Capacitance fT Gain Bandwidth Product 2.4 6 4 3V 1.6 0.8 2 0 0.1 0 1 2 5 10 20 IC 50 (mA) 100 Collector Current 0.2 0.5 1 2 VCB 5 10 (V) Collector to Base Voltage Rev.0, Aug. 2002, page 3 of 14 2SC5890 20 Power Gain vs. Collector Current 5 f = 900 MHz 16 VCE = 5 V 12 3V 8 Noise Figure NF (dB) PG (dB) Noise Figure vs. Collector Current f = 900 MHz 4 3 VCE = 3 V 2 5V 1 Power Gain 4 0 1 0 2 5 10 20 IC 50 (mA) 100 1 2 5 10 20 IC 50 (mA) 100 Collector Current Collector Current 20 S21 Parameter | S21 |2 (dB) S21 Parameter vs. Collector Current f = 1 GHz 16 VCE = 5 V 3V 12 8 4 0 1 2 5 10 20 50 100 Collector Current IC (mA) Rev.0, Aug. 2002, page 4 of 14 2SC5890 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 -10 -.2 -5 -4 -3 -.4 -2 -.6 -.8 -1 -1.5 -120 -90 -60 180 0 150 30 1 1.5 2 120 S21 Parameter vs. Frequency 90 Scale: 8.0 / div. 60 -150 -30 Condition: VCE = 3 V, ZO = 50 100 to 2000 MHz (100 MHz Step) (IC = 10 mA) (IC = 30 mA) (IC = 50 mA) Condition: VCE = 3 V, ZO = 50 100 to 2000 MHz (100 MHz Step) (IC = 10 mA) (IC = 30 mA) (IC = 50 mA) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 30 .2 Scale: 0.08 / div. 60 150 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 -10 -.2 -150 -30 -.4 -2 -120 -90 -60 -.6 -.8 -1 -1.5 -5 -4 -3 Condition: VCE = 3 V, ZO = 50 100 to 2000 MHz (100 MHz Step) (IC = 10 mA) (IC = 30 mA) (IC = 50 mA) Condition: VCE = 3 V, ZO = 50 100 to 2000 MHz (100 MHz Step) (IC = 10 mA) (IC = 30 mA) (IC = 50 mA) Rev.0, Aug. 2002, page 5 of 14 2SC5890 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 -10 -.2 -5 -4 -3 -.4 -2 -.6 -.8 -1 -1.5 -120 -90 -60 180 0 150 30 1 1.5 2 120 S21 Parameter vs. Frequency 90 Scale: 8.0 / div. 60 -150 -30 Condition: VCE = 5 V, ZO = 50 100 to 2000 MHz (100 MHz Step) (IC = 10 mA) (IC = 30 mA) (IC = 50 mA) Condition: VCE = 5 V, ZO = 50 100 to 2000 MHz (100 MHz Step) (IC = 10 mA) (IC = 30 mA) (IC = 50 mA) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 30 .2 Scale: 0.08 / div. 60 150 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 -10 -.2 -150 -30 -.4 -2 -120 -90 -60 -.6 -.8 -1 -1.5 -5 -4 -3 Condition: VCE = 5 V, ZO = 50 100 to 2000 MHz (100 MHz Step) (IC = 10 mA) (IC = 30 mA) (IC = 50 mA) Condition: VCE = 5 V, ZO = 50 100 to 2000 MHz (100 MHz Step) (IC = 10 mA) (IC = 30 mA) (IC = 50 mA) Rev.0, Aug. 2002, page 6 of 14 2SC5890 S parameter (VCE = 3V, IC = 10 mA, Zo = 50 ) S11 f (MHz) MAG 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.635 0.524 0.483 0.462 0.454 0.448 0.451 0.448 0.453 0.452 0.453 0.459 0.460 0.464 0.469 0.474 0.477 0.482 0.491 0.490 ANG -75.2 -115.1 -138.4 -152.3 -162.6 -170.5 -176.9 177.1 171.7 168.6 163.6 158.8 155.4 151.8 148.8 145.5 143.0 139.0 136.7 133.2 S21 MAG 19.73 12.64 8.86 6.82 5.51 4.63 4.01 3.54 3.17 2.87 2.63 2.43 2.27 2.13 2.00 1.89 1.80 1.72 1.65 1.59 ANG 130.5 109.7 98.7 91.6 86.4 81.9 78.0 74.2 71.5 68.2 65.1 62.5 59.8 57.4 54.8 52.2 49.9 47.9 45.6 43.5 S12 MAG 0.042 0.058 0.071 0.083 0.096 0.108 0.121 0.134 0.149 0.162 0.176 0.190 0.204 0.218 0.232 0.246 0.260 0.274 0.288 0.302 ANG 55.9 49.5 50.6 52.8 55.2 56.8 58.2 59.0 59.8 60.0 60.3 60.4 60.1 60.0 59.5 58.8 58.6 57.9 57.1 56.6 S22 MAG 0.698 0.455 0.330 0.266 0.226 0.201 0.185 0.175 0.169 0.163 0.161 0.162 0.160 0.162 0.162 0.167 0.169 0.172 0.177 0.179 ANG -51.2 -70.6 -80.4 -86.8 -91.9 -96.3 -99.5 -103.3 -106.3 -109.9 -112.3 -116.0 -118.1 -121.1 -124.7 -126.3 -129.4 -132.4 -134.6 -137.2 Rev.0, Aug. 2002, page 7 of 14 2SC5890 (VCE = 3V, IC = 30 mA, Zo = 50 ) S11 f (MHz) MAG 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.449 0.431 0.429 0.428 0.430 0.421 0.431 0.428 0.438 0.436 0.436 0.445 0.446 0.446 0.451 0.454 0.457 0.459 0.473 0.465 ANG -118.4 -150.0 -165.1 -174.1 179.3 174.0 169.6 165.6 161.3 157.8 154.0 150.5 147.5 144.6 141.6 138.6 136.2 132.6 130.7 127.4 S21 MAG 27.19 15.04 10.09 7.63 6.12 5.12 4.42 3.89 3.48 3.15 2.88 2.66 2.49 2.33 2.19 2.07 1.98 1.88 1.80 1.73 ANG 113.3 98.0 90.5 85.6 81.7 78.2 75.3 72.2 69.8 66.9 64.2 62.3 59.7 57.5 55.0 53.0 50.6 49.0 46.6 44.9 S12 MAG 0.029 0.043 0.060 0.076 0.093 0.110 0.126 0.143 0.160 0.176 0.193 0.209 0.225 0.240 0.256 0.272 0.287 0.301 0.317 0.331 ANG 57.1 61.4 65.3 67.0 67.6 67.9 67.8 67.4 66.9 65.9 65.3 64.3 63.4 62.5 61.2 60.2 59.3 58.2 57.0 55.9 S22 MAG 0.459 0.270 0.199 0.170 0.152 0.144 0.139 0.138 0.137 0.138 0.138 0.142 0.141 0.146 0.148 0.151 0.155 0.158 0.163 0.165 ANG -76.8 -98.5 -112.0 -121.5 -129.4 -135.4 -139.6 -144.1 -146.7 -150.7 -152.5 -155.5 -157.2 -159.1 -162.0 -162.2 -164.6 -166.8 -167.7 -169.7 Rev.0, Aug. 2002, page 8 of 14 2SC5890 (VCE = 3V, IC = 50 mA, Zo = 50 ) S11 f (MHz) MAG 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.424 0.426 0.433 0.437 0.440 0.435 0.443 0.441 0.446 0.447 0.444 0.455 0.455 0.463 0.462 0.466 0.469 0.474 0.481 0.476 ANG -136.3 -160.8 -171.8 -179.2 175.1 170.8 166.5 162.8 158.4 155.7 152.5 148.4 145.9 142.3 140.1 137.4 135.1 131.2 129.6 126.4 S21 MAG 28.25 15.12 10.08 7.59 6.09 5.08 4.39 3.86 3.44 3.11 2.86 2.64 2.47 2.31 2.17 2.05 1.97 1.87 1.79 1.72 ANG 108.0 94.5 88.0 83.5 80.1 76.8 73.9 70.9 68.4 65.9 63.3 61.0 58.5 56.5 54.0 51.9 50.0 48.3 46.0 44.0 S12 MAG 0.025 0.041 0.058 0.076 0.093 0.110 0.128 0.145 0.163 0.179 0.196 0.212 0.229 0.244 0.261 0.276 0.291 0.306 0.321 0.336 ANG 60.4 65.8 69.0 70.1 70.2 69.9 69.4 68.6 67.8 66.8 65.9 64.8 63.6 62.7 61.3 60.3 59.1 58.0 56.7 55.6 S22 MAG 0.382 0.225 0.172 0.152 0.141 0.138 0.134 0.135 0.136 0.138 0.138 0.143 0.142 0.147 0.151 0.153 0.157 0.161 0.165 0.166 ANG -86.3 -108.8 -122.9 -132.5 -140.5 -146.0 -149.8 -153.3 -155.4 -159.5 -160.9 -163.1 -164.6 -166.3 -169.0 -169.0 -171.3 -173.0 -173.5 -176.0 Rev.0, Aug. 2002, page 9 of 14 2SC5890 (VCE = 5V, IC = 10 mA, Zo = 50 ) S11 f (MHz) MAG 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.643 0.512 0.460 0.433 0.421 0.411 0.414 0.414 0.419 0.414 0.421 0.420 0.424 0.428 0.435 0.439 0.444 0.450 0.454 0.458 ANG -69.1 -107.8 -130.9 -146.9 -157.7 -166.4 -173.0 -179.6 174.3 170.8 166.3 161.3 157.6 154.2 150.5 147.4 144.2 140.1 137.5 134.0 S21 MAG 20.28 13.36 9.51 7.33 5.96 5.01 4.34 3.83 3.43 3.10 2.84 2.63 2.45 2.29 2.16 2.03 1.94 1.85 1.77 1.69 ANG 134.6 113.9 102.7 95.6 90.2 85.6 81.7 78.0 75.0 71.8 68.8 66.0 63.3 61.2 58.4 56.0 53.8 51.5 49.4 47.3 S12 MAG 0.038 0.053 0.064 0.075 0.087 0.098 0.111 0.123 0.136 0.149 0.161 0.175 0.188 0.201 0.214 0.227 0.240 0.254 0.267 0.281 ANG 60.7 54.0 54.8 57.2 59.4 61.2 62.2 63.5 64.1 64.5 64.8 64.9 64.7 64.6 64.2 63.9 63.6 63.0 62.5 62.0 S22 MAG 0.719 0.485 0.362 0.295 0.256 0.230 0.212 0.200 0.192 0.186 0.182 0.180 0.178 0.179 0.178 0.180 0.181 0.182 0.185 0.187 ANG -40.0 -55.1 -61.6 -64.8 -66.7 -68.5 -70.4 -72.5 -74.5 -76.9 -78.9 -81.9 -84.6 -87.2 -90.2 -93.1 -96.2 -99.2 -102.2 -105.3 Rev.0, Aug. 2002, page 10 of 14 2SC5890 (VCE = 5V, IC = 30 mA, Zo = 50 ) S11 f (MHz) MAG 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.430 0.387 0.380 0.374 0.375 0.376 0.384 0.383 0.388 0.385 0.390 0.398 0.396 0.406 0.407 0.408 0.414 0.420 0.428 0.427 ANG -108.9 -142.7 -158.5 -168.7 -176.5 177.6 172.9 167.8 164.0 159.5 155.7 152.4 148.1 146.2 142.5 139.8 137.8 133.6 131.5 128.4 S21 MAG 28.25 16.05 10.90 8.27 6.67 5.59 4.82 4.24 3.78 3.43 3.13 2.90 2.70 2.53 2.37 2.25 2.13 2.04 1.94 1.86 ANG 118.1 102.5 94.7 89.8 85.8 82.3 79.4 76.5 73.8 70.9 68.4 66.2 63.8 61.7 59.2 57.1 54.9 53.1 50.9 49.2 S12 MAG 0.026 0.040 0.055 0.070 0.085 0.101 0.116 0.131 0.147 0.162 0.177 0.192 0.207 0.221 0.236 0.250 0.265 0.278 0.292 0.306 ANG 61.8 65.5 69.2 70.7 71.8 72.1 71.7 71.6 71.3 70.6 69.7 69.2 68.2 67.4 66.4 65.4 64.4 63.5 62.5 61.3 S22 MAG 0.482 0.283 0.205 0.165 0.143 0.130 0.121 0.116 0.112 0.111 0.111 0.111 0.112 0.114 0.115 0.118 0.122 0.124 0.128 0.131 ANG -59.0 -72.0 -77.8 -81.7 -84.6 -87.9 -90.6 -93.5 -96.9 -99.9 -102.7 -106.2 -108.8 -111.8 -115.0 -117.5 -120.7 -123.7 -126.6 -129.1 Rev.0, Aug. 2002, page 11 of 14 2SC5890 (VCE = 5V, IC = 50 mA, Zo = 50 ) S11 f (MHz) MAG 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.392 0.380 0.379 0.380 0.381 0.381 0.390 0.389 0.394 0.393 0.396 0.403 0.407 0.410 0.411 0.414 0.416 0.428 0.436 0.431 ANG -125.2 -153.9 -167.5 -175.1 178.8 173.2 168.9 165.1 160.4 157.7 153.6 150.0 147.4 144.0 141.2 138.5 136.4 132.5 130.7 127.3 S21 MAG 30.12 16.44 11.03 8.33 6.68 5.59 4.82 4.25 3.79 3.43 3.13 2.89 2.70 2.52 2.36 2.25 2.13 2.03 1.94 1.87 ANG 111.6 97.6 90.8 86.2 82.5 79.4 76.5 73.5 71.2 68.6 66.0 63.8 61.4 59.2 57.0 54.9 52.6 50.6 48.6 46.8 S12 MAG 0.023 0.037 0.053 0.069 0.085 0.100 0.116 0.132 0.148 0.163 0.178 0.193 0.209 0.223 0.238 0.253 0.267 0.281 0.295 0.309 ANG 62.6 67.6 70.8 72.1 72.2 72.3 71.7 71.1 70.7 69.7 69.0 67.9 67.0 66.1 65.0 64.0 63.0 62.0 60.9 59.8 S22 MAG 0.411 0.235 0.170 0.139 0.121 0.111 0.105 0.102 0.101 0.100 0.100 0.103 0.103 0.106 0.108 0.113 0.115 0.118 0.123 0.124 ANG -67.0 -78.0 -82.6 -86.5 -89.3 -93.0 -95.3 -98.9 -101.5 -105.7 -107.8 -111.8 -113.8 -117.1 -120.5 -122.6 -125.9 -128.8 -131.2 -134.1 Rev.0, Aug. 2002, page 12 of 14 2SC5890 Package Dimensions As of January, 2002 Unit: mm 0.65 0.10 0.4 + 0.05 - 0.16 - 0.06 + 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + 0.2 1.1 - 0.1 0.65 2.8 Hitachi Code JEDEC JEITA Mass (reference value) MPAK(T) -- Conforms 0.011 g Rev.0, Aug. 2002, page 13 of 14 2SC5890 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-6538-6533/6538-8577 Fax : <65>-6538-6933/6538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright (c) Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 6.0 Rev.0, Aug. 2002, page 14 of 14 |
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